DB3 DIAC Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

SILICON BIDIRECTIONAL DIAC

Manufacture

SIYU

Total Page 2 Pages
Datasheet
Download DB3 Datasheet


DB3
SIYU R
双向触发二极管
DO-35 Glass
Unit:mm
极限参数( LIMITING VALUES )
DB3/DB4
SILICON BIDIRECTIONAL DIAC
特征 Features
·反向漏电流低 Low reverse leakage
·正向浪涌承受能力较强 High forward surge capability
·高温焊接保证 High temperature soldering guaranteed:
260/10 , 0.375" (9.5mm)引线长度。
260/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 (2.3kg) 拉力。 5 lbs. (2.3kg) tension
·引线和管体皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据 Mechanical Data
·端子: 镀锡轴向引线 Terminals: Plated axial leads
·安装位置: 任意 Mounting Position: Any
符号
Symbols
Pc
ITRM
参数
Parameters
功耗
Power Dissipation
峰值脉冲电压
Repetitive Peak on-state Current
TA=50
tp=10uS
F=100Hz
TSTG
TJ
贮存 温度范围
Storage Temperature
工作结温范围
0 perating Junction Temperature
www.DataSheet.co.kr
电特性(ELECTRICAL CHARACTERISTICS)
Value
DB3/DB4
150
2.0
-40 to +125
-40 to +100
单位
Unit
mW
A
符号
Symbols
参数
Parameters
测试条件
Test Conditions
击穿电压
VBO
Breakover Voltage [Note 2 ]
C=22nF [Note 2 ]
See Diagram 1
击穿电压对称性
I+VBOI- I-VBOI Breakover Voltage Symmetry
动态回弹电压
I ± VI Dynamic Breakover Voltage [Note 1 ]
输出电压
Vo Output Voltage [Note 1 ]
IBO
击穿电流
Breakover Current [Note 1 ]
tr
上升时间
Rise Time [Note 1 ]
IB 漏电电流
Leakage Current [Note 1 ]
IP
峰值电流
Peak Current [Note 1 ]
C=22nF [Note 2 ]
See Diagram 1
I=[ IBO to IF=10mA ]
See Diagram 1
See Diagram 2
C=22nF [Note 2 ]
See Diagram 3
VBBO=0.5V max
See Diagram 1
See Diagram 2 (Gate)
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
Min
Value
单位
DB3 DB4 Unit
28 35
32 40
36 45
V
±3 V
5V
5V
100 uA
1.5 uS
10 uA
0.3 A
Notes:1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
大昌电子 DACHANG ELECTRONICS
Datasheet pdf - http://www.DataSheet4U.net/

DB3
SIYU R
DIAGRAM 1: Current-voltage characteristics
+IF
10mA
IBO
IB
-V +V
0.5V BO
V
VBO
-IF
DB3/DB4
DIAGRAM 2: Test circuit for output voltage
10K
200V
50Hz
500K
0.1F
D.U.T
Vo
R=20
DIAGRAM 3: Test circuit see diagram 2
90% Ip
10%
tr
FIG.1-Power dissipation versus ambient
temperature ( maximum values )
P [mW]
160
140
120
100
80
60
40 Tamb []
20
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
www.DataSheet.co.kr
FIG.2-Peck pulse current versus pluse duration
( maximum values )
2
1 F=100Hz
TJ initial=25
0.1
0.01
10
tp[ s ]
100 1000
10000
大昌电子 DACHANG ELECTRONICS
Datasheet pdf - http://www.DataSheet4U.net/


Features SIYU R DO-35 Glass DB3/DB4 SILICON BID IRECTIONAL DIAC Features · Low revers e leakage · High forward surge capabil ity · High temperature soldering guara nteed: 260℃/10 , 0.375" (9.5mm) 260 /10 seconds, 0.375" (9.5mm) lead lengt h, ·5 (2.3kg) 5 lbs. (2.3kg) tension ·RoHS Lead and body according with R oHS standard Mechanical Data Unit:m m ·: Terminals: Plated axial leads : Mounting Position: Any ( LIMITING VALUES ) Symbols Pc Power Dissipatio n Parameters TA=50℃ tp=10uS F=100H z Value DB3/DB4 150 Unit mW ITRM R epetitive Peak on-state Current Stora ge Temperature 2.0 A TSTG -40 to +1 25 www.DataSheet.co.kr ℃ TJ 0 per ating Junction Temperature -40 to +100 ℃ (ELECTRICAL CHARACTERISTICS) S ymbols VBO Parameters Test Conditi ons C=22nF [Note 2 ] See Diagram 1 C=22 nF [Note 2 ] See Diagram 1 △I=[ IBO t o IF=10mA ] See Diagram 1 See Diagram 2 C=22nF [Note 2 ] See Diagram 3 VBBO=0. 5V max See Diagram 1 See Diagram 2 (Gate) Min Typ Max Max Min Min Max Typ Max Min V.
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