2SC3787

Ordering number:ENN2089B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1477/2SC3787 160V/140mA Switching Applications Applications · Predrivers for 100W power amplifiers. Features · Adoption of FBET process. · Excellent linearity of hFE. · Small Cob. · Plastic-convered heat sink facilitating high-density mounting (TO-126ML package). Package Dimensions unit:mm 2042B [2SA1477/2SC3787] 8.0 4.0 1.0 1.0 3.3 3.0 1.6 0.8 1.5 1.4 3.0 7.5 15.5 11.0 0.8 0.75 0.7 ( ) : 2SA1477 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA *: The 2SA1477/2SC3787 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 123 2.4 4.8 1.7 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings (–)180 (–)160 (–)5 (–)140 (–)200 1.3 10 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ max Unit (–)100 nA (–)100 nA 100 400 150 MHz Continued on next page. Any and all SANYO products described or contained herein do not ha...