B1274 Transistors Datasheet

B1274 Datasheet, PDF, Equivalent


Part Number

B1274

Description

PNP/NPN Epitaxial Planar Silicon Transistors

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download B1274 Datasheet


B1274
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Applications
General power amplifier.
Package Dimensions
unit : mm
2041A
Features
Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
Micaless package facilitating mounting.
Specifications
( ):2SB1274
Absolute Maximum Ratings at Ta=25°C
[2SB1274/2SD1913]
4.5
10.0 2.8
3.2
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
www.DataSheet.co.kr
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
Ratings
()60
()60
()6
()3
()8
2
20
150
55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
(--)100
µA
(--)100
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000 TS IM 8-2055 No.2246-1/4
Datasheet pdf - http://www.DataSheet4U.net/

B1274
2SB1274/2SD1913
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
hFE1
hFE2
fT
Cob
VCE(sat)
VBE
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)3A
VCE=(--)5V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)0.2A
VCE=(--)5V, IC=(--)0.5A
IC=(--)1mA, IE=0
IC=5mA, RBE=
IE=(--)1mA, IC=0
* : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
min
70*
20
(--)60
(--)60
(--)6
Ratings
typ
100
(60)40
(--)0.4
(--)0.8
max
280*
(--)1
(--)1
Unit
MHz
pF
V
V
V
V
V
--3.0
2SB1274
--2.5
--2.0
--1.5
IC -- VCE
--35mA
--30mA
--25mA
--20mA
--15mA
--10mA
--1.0
--5mA
--0.5
0 IB=0
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--3.6
2SB1274
--3.2 VCE= --5V
--6
IT02816
--2.8
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE -- V IT02818
www.DataSheet.co.kr
3.0
2.5
2.0
1.5
1.0
IC -- VCE
30m2A5mA
20mA
40mA 35mA
2SD1913
15mA
10mA
5mA
0.5
0
0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
IB=0
123456
Collector-to-Emitter Voltage, VCE -- V IT02817
IC -- VBE
2SD1913
VCE=5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02819
No.2246-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Features Ordering number : ENN2246B 2SB1274/2SD1 913 PNP/NPN Epitaxial Planar Silicon Tr ansistors 2SB1274/2SD1913 60V/3A Low-F requency Power Amplifier Applications A pplications • Package Dimensions uni t : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplif ier. Features • • • • • 10. 0 3.2 Wide ASO (Adoption of MBIT proce ss). Low saturation voltage. High relia bility. High breakdown voltage. Micales s package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolut e Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to -Emitter Voltage Emitter-to-Base Voltag e Collector Current Collector Current ( Pulse) Collector Dissipation Junction T emperature Storage Temperature Symbol V CBO VCEO VEBO IC ICP PC Tj Tstg Tc=25° C www.DataSheet.co.kr 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 ML 2.55 2.55 Conditions Ratings ( )60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150 Unit V V V A A W W °C °C Elect.
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