Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Fre...
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1274/2SD1913
60V/3A Low-Frequency Power Amplifier Applications
Applications
Package Dimensions
unit : mm 2041A
[2SB1274/2SD1913]
4.5 2.8
3.5 7.2 16.0 18.1
General power amplifier.
Features
10.0 3.2
Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting.
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55
2.4
2.4 0.7
Specifications
( ):2SB1274 Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
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2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
2.55
2.55
Conditions
Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably...
