BDX95

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min)- BDX91 80V(Min)- BDX93 100V(Min)- BDX95 ·Complement to Type BDX92/94/96 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDX91 60 BDX93 80 BDX95 100 VCEO Collector-Emitter Voltage BDX91 60 BDX93 80 BDX95 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.94 ℃/W BDX91/93/95 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDX91/93/95 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX91 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDX93 IC= 30mA ;IB=0 60 V BDX95 80 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.8 V 1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(sat)-2 Base-...