BDX96

isc Silicon PNP Power Transistor BDX92/94/96 DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96 ·Complement to Type BDX91/93/95 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDX92 -60 BDX94 -80 V BDX96 -100 VCEO Collector-Emitter Voltage BDX92 -60 BDX94 -80 V BDX96 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 90 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.94 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDX92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage BDX92 BDX94 BDX96 IC= -30mA ;IB=0 VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage ICBO Collector Cutoff Curre...