2SC380TM

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 35 30 4 50 -50 300 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-base time constant Power gain Symbol Test Condition ICBO VCB = 35 V, IE = 0 IEBO VEB = 4 V, IC = 0 hFE VCE = 12 V, IC = 2 mA (Note) VCE (sat) VBE fT Cob Cc･rbb’ Gpe IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1) Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 40 ¾ 240 ¾ ¾ 0.4 V ¾ ¾ 1.0 V 100 ¾ 400 MHz 1.4 2.0 3.2 pF 10 ¾ 50 ps 27 29 33 dB 1 2003-03-27 y Parameters (typ.) (1) (common emitter f = 455 kHz, Ta = 25°C) Cha...