2SC380TM
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC380TM
High Frequency Amplifier Applicati...
2SC380TM
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type (PCT process)
2SC380TM
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IE PC Tj Tstg
Rating
35 30 4 50 -50 300 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-base time constant
Power gain
Symbol
Test Condition
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE VCE = 12 V, IC = 2 mA
(Note)
VCE (sat) VBE fT Cob
Cc・rbb’
Gpe
IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA
40 ¾ 240
¾ ¾ 0.4 V ¾ ¾ 1.0 V 100 ¾ 400 MHz 1.4 2.0 3.2 pF 10 ¾ 50 ps
27 29 33 dB
1 2003-03-27
y Parameters (typ.)
(1) (common emitter f = 455 kHz, Ta = 25°C)
Cha...