2SC3810

DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating PACKAGE DIMENSIONS (in millimeters) 5.0 MIN. 1.25 ± 0.1 5.0 MIN. 3.5 +0.3 -0.2 2 0.6 ± 0.1 current range. Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits. 3 4 5.0 MIN. 1 5 PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance (junction to case) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Rth (j-c) Tj Tstg RATINGS 20 10 1.5 65/unit 240/unit 90/unit 200 -65 to +200 UNIT V V V mA mW °C/W °C °C (#492C) PIN CONNECTIONS 2 3 C2 C1 4 B1 E 5 1 B2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain hFE Ratio Difference of Base to Emitter Voltage Gain Bandwidth Product Feedback Capacitance SYMBOL BVCBO BVEBO BVCEO ICBO IEBO hFE hFE1/hFE2 Note 1 TEST CONDITIONS IC = 10 µA IE = 10 µA, IC = 0 IC = 1 mA, RBE = ∞ VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCB...