2SC3830

2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3830 600 500 10 6(Pulse12) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1.3max 8typ 45typ (Ta=25°C) 2SC3830 Unit mA External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 µA 16.0±0.7 V V MHz pF 8.8±0.2 a b ø3.75±0.2 12.0min 4.0max V 1.35 0.65 +0.2 -0.1 2.5 B C E 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.2 IB2 (A) –0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 6 1A 80 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) (I C /I B =5) 2 I C – V BE Temperature Characteristics (Typical) 6 (V CE =4V) 5 Collector Current I C (A) 60 0m A 5 Collector Current I C (A) 4 400 mA 4 300mA 3 V B E (sat) 1 p) –55˚C (Case Tem Temp) ase Tem p) 3 mp 200mA 2 I B =100mA emp se T 2 (Ca (Ca 25˚C 12 V...