2SC3831
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maxim...
2SC3831
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switching
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1 . 3 max 8typ 105typ
(Ta=25°C) 2SC3831 Unit
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
mA
µA
4.0
V V MHz pF
19.9±0.3
a b
ø3.2±0.1
20.0min
4.0max
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 40 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –1.0 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
10
A .2
1A
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
(I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V )
I C – V BE Temperature Characteristics (Typical)
10 (V CE =4V)
=1
800 mA
V B E (sat) 1
–55˚C (Cas
25˚C (C
Collector Current I C (A)
e Temp)
p)
)
)
mp
6
400 mA
ase Tem
Collector Current I C (A)
8
IB
60 0m A
8
6
p) Tem
Te
...