2SC898

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC898 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1A ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V 2SC898 MIN TYP. MAX UNIT 150 V 1.5 V 1.8 V 1.0 mA 1.0 mA 50 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in gener...