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K6A65D
TK6A65D
Description
TK6A65D TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type (π-MOS VII) TK6A65D Switching
Regulator
Applications Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Uni...
Toshiba Semiconductor
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