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TSOP35D26 Dataheets PDF



Part Number TSOP35D26
Manufacturers Vishay Semiconductors
Logo Vishay Semiconductors
Description IR Receiver Modules
Datasheet TSOP35D26 DatasheetTSOP35D26 Datasheet (PDF)

TSOP35D26 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Compliant to CEA-2038 for long command encoding • Command driven IR synchronized active eyewear standard • Center frequency at 26.2 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz 1 2 3 4 16797 • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm • Very low supply current and stand-by mode • Photo detector and preamp.

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TSOP35D26 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Compliant to CEA-2038 for long command encoding • Command driven IR synchronized active eyewear standard • Center frequency at 26.2 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz 1 2 3 4 16797 • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm • Very low supply current and stand-by mode • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Supply voltage range: 2.5 V to 5.5 V • Improved immunity against modulated light sources • Insensitive to supply voltage ripple and noise • Taping available for topview and sideview assembly • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Pinning: 1 = GND, 2 = N.C., 3 = VS, 4 = OUT DESCRIPTION The TSOP35D26 is an SMD IR receiver module for 3D synchronization signals. The receiver is designed to operate at a carrier frequency of 26.2 kHz and a wavelength of 830 nm to avoid interference with standard remote control systems at 940 nm and 30 kHz to 56 kHz. The TSOP35D26 can receive continuously transmitted signal patterns with a minimum burst length of 6 cycles and frame rates up to 200 Hz. The circuit provides good suppression of optical noise from CFLs, LCD backlight and plasma panels. www.DataSheet.co.kr PARTS TABLE CARRIER FREQUENCY 26.2 kHz GOOD NOISE SUPPRESSION AND FAST BURST RATE TSOP35D26 BLOCK DIAGRAM 3 30 k Ω Demo dulator VS 4 Input AGC Band pass OUT APPLICATION CIRCUIT 17170_5 R1 IR receiver VS Circuit C1 OUT GND VO µC GND + VS Transmitter with TSALxxxx 1; 2 PIN 16839 Control circuit GND R1 and C1 are recommended for protection against EOS. Components should be in the range of 33 Ω < R1 < 1 kΩ, C1 > 0.1 µF. Rev. 1.2, 12-Mar-12 1 Document Number: 83468 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ TSOP35D26 www.vishay.com Vishay Semiconductors TEST CONDITION SYMBOL VS IS VO IO Tj Tstg Tamb Tamb ≤ 85 °C Ptot VALUE - 0.3 to + 6 3 - 0.3 to (VS + 0.3) 5 100 - 40 to + 100 - 30 to + 85 10 UNIT V mA V mA °C °C °C mW ABSOLUTE MAXIMUM RATINGS PARAMETER Supply voltage (pin 3) Supply current (pin 3) Output voltage (pin 4) Output current (pin 4) Junction temperature Storage temperature range Operating temperature range Power consumption Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Supply current (pin 3) Supply voltage Transmission distance Output voltage low (pin 4) Minimum irradiance Maximum irradiance Directivity Ev = 0, test signal see fig. 1, IR diode TSHG8400, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 Pulse width tolerance: tpi - 80 μs < tpo < tpi + 160 μs, test signal see fig. 1 tpi - 80 μs < tpo < tpi + 160 μs, test signal see fig. 1 Angle of half transmission distance TEST CONDITION Ev = 0, VS = 3.3 V Ev = 40 klx, sunlight SYMBOL ISD ISH VS d VOSL Ee min. 30 ± 50 0.15 2.5 35 100 0.35 MIN. 0.27 TYP. 0.35 0.45 5.5 MAX. 0.45 UNIT mA mA V m mV mW/m2 W/m2 deg www.DataSheet.co.kr Ee max. ϕ1/2 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Optical Test Signal Ee (IR diode TSHG8400, N = 6 cycles/burst, f = 25 kHz, trep = 10 ms) 0.30 Output Pulse Width tpo - Output Pulse Width (ms) 0.25 Input Burst Length 0.20 0.15 0.10 0.05 0 0.1 1 10 λ = 830 nm, Optical Test Signal, Fig.1 102 103 104 105 tpi trep VO Output Signal t tpi ≥ 240 µs trep ≥ 4.1 ms tpi - 80 µs < tpo < tpi + 160 µs 120 µs < tdon < 240 µs t 22477 tdon tpo 22476 Ee - Irradiance (mW/m2) Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient Rev. 1.2, 12-Mar-12 2 Document Number: 83468 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ TSOP35D26 www.vishay.com Vishay Semiconductors Ee min. - Threshold Irradiance (mW/m2) 4 Correlation with Ambient Light Sources: 2 3.5 10 W/m = 1.4 kLx (Std. illum. A, T = 2855 K) 10 W/m2 = 8.2 kLx (Daylight, T = 5900 K) 3 2.5 2 1.5 1 0.5 0 0.01 Wavelength of Ambient Illumination: λ = 950 nm Ee Optical Test Signal 600 µs t = 60 ms Output Signal, (see fig. 4) 600 µs t 94 8134 VO VOH VOL t on t off t 20757 0.1 1 10 100.


NAU8811 TSOP35D26 MAX14984


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