2SC3867

2SC3867 Silicon NPN Epitaxial Application UHF frequency converter Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector 2SC3867 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain Noise figure Note: Marking is “DI–” Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob CG NF Min 20 11 3 — — 45 2.5 — 10 — Typ — — — — — — 3.8 0.8 14 10 Max — — — 0.5 0.7 200 — 1.5 — 14 GHz pF dB dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IE = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 10 V, IC = 1 mA, f = 900 MHz, f osc = 930 MHz, (–5dBm), fout = 30 MHz 2 2SC3867 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs.Collector Current 200 VCE = 10 V 160 100 120 80 50 40 0 0 50 100 150 Ambient Temp...