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V10150C Dataheets PDF



Part Number V10150C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V10150C DatasheetV10150C Datasheet (PDF)

www.vishay.com V10150C, VI10150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 A TO-220AB TMBS ® TO-262AA K V10150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI10150C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see ww.

  V10150C   V10150C


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www.vishay.com V10150C, VI10150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 A TO-220AB TMBS ® TO-262AA K V10150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI10150C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5 A TJ max. Package 2 x 5.0 A 150 V 60 A 0.69 V 150 °C TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V10150C VI10150C 150 10 5.0 60 10 000 -55 to +150 UNIT V A A V/μs °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Instantaneous forward voltage per diode Reverse current per diode IF = 3 A IF = 5 A IF = 3 A IF = 5 A VR = 100 V VR = 150 V TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) 0.82 0.99 0.63 0.69 0.5 0.5 1.0 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms MAX. - 1.41 - 0.75 - 100 10 UNIT V μA mA μA mA Revision: 07-Nov-17 1 Document Number: 89154 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V10150C, VI10150C Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10150C Typical thermal resistance per diode RJC 4.0 VI10150C UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB V10150C-M3/4W 1.87 TO-262AA VI10150C-M3/4W 1.45 PACKAGE CODE 4W 4W BASE QUANTITY 50/tube 50/tube DELIVERY MODE Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 12 Resistive or Inductive Load 10 8 6 4 2 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 100 TA = 150 °C Instantaneous Forward Current (A) 10 TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Average Power Loss (W) 5 D = 0.8 D = 0.5 4 D = 0.3 D = 0.2 3 D = 0.1 2 D = 1.0 T 1 D = tp/T tp 0 0 1 2 3 4 5 6 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Instantaneous Reverse Current (mA) 10 1 0.1 0.01 TA = 150 °C TA = 125 °C TA = 100 °C 0.001 0.0001 TA = 25 °C 0.00001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 07-Nov-17 2 Document Number: 89154 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 10 000 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p V10150C, VI10150C Vishay General Semiconductor 10 Junction to Case Junction Capacitance (pF) Transient Thermal Impedance (°C/W) 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.415 (10.54) 0.380 (9.65) TO-220AB 0.161 (4.08) 0.139 (3.53) 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) PIN 123 0.057 (1.45) 0.045 (1.14) 0.635 (16.13) 0.625 (15.87) 0.3.


TYN690 V10150C VI10150C


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