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V10P10
Vishay General Semiconductor
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low
VF = 0.453 V at IF = 5 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
100 V
IFSM
180 A
EAS
100 mJ
VF at IF = 10 A
0.574 V
TJ max. Package
150 °C SMPC (TO-277A)
Circuit configuration
Single
MECHANICAL DATA
Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10P10
Device marking code
V1010
Maximum repetitive peak reverse voltage
VRRM
100
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
IF(AV)
10
IFSM
180
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
EAS
100
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction temperature range Storage temperature range
IRRM TJ (1) TSTG
1.0 -40 to +175 -55 to +175
Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA
UNIT
V A A mJ A °C °C
Revision: 20-Jan-2020
1
Document Number: 89006
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V10P10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1 mA
TA = 25 °C
VBR
100 (minimum)
Instantaneous forward voltage
IF = 5 A IF = 10 A IF = 5 A IF = 10 A
TA = 25 °C TA = 125 °C
VF (1)
0.512 0.625 0.453 0.574
Reverse current
VR = 70 V VR = 100 V
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
IR (2)
7.1 4.5 30.4 10.4
Notes (1) Pulse tes.