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V10P10 Dataheets PDF



Part Number V10P10
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet V10P10 DatasheetV10P10 Datasheet (PDF)

www.vishay.com V10P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.453 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of .

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www.vishay.com V10P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.453 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 100 V IFSM 180 A EAS 100 mJ VF at IF = 10 A 0.574 V TJ max. Package 150 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10P10 Device marking code V1010 Maximum repetitive peak reverse voltage VRRM 100 Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IF(AV) 10 IFSM 180 Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 100 Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction temperature range Storage temperature range IRRM TJ (1) TSTG 1.0 -40 to +175 -55 to +175 Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA UNIT V A A mJ A °C °C Revision: 20-Jan-2020 1 Document Number: 89006 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V10P10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Breakdown voltage IR = 1 mA TA = 25 °C VBR 100 (minimum) Instantaneous forward voltage IF = 5 A IF = 10 A IF = 5 A IF = 10 A TA = 25 °C TA = 125 °C VF (1) 0.512 0.625 0.453 0.574 Reverse current VR = 70 V VR = 100 V TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) 7.1 4.5 30.4 10.4 Notes (1) Pulse tes.


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