Power Transistors
2SC3872
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit...
Power
Transistors
2SC3872
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
q q q q
16.2±0.5 12.5 3.5 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 20 10 5 70 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
0.7
s Features
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 5A IC = 5A, IB = 1A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 1A, IB2 = –2A, VCC = 150V 25 0.7 2 0.3 400 15...
