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V40M120C

Vishay

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A FEATURES...


Vishay

V40M120C

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New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ® Trench MOS Schottky technology TO-262AA Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 2 K MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 250 A 0.64 V 150 °C Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test www.DataSheet.co.kr per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR...




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