VB20M120C

New Product VB20M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.55 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VB20M120C PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 120 A 0.64 V 150 °C Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum www.DataSheet.co.kr per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) IFSM dV/dt TJ, TSTG SYMBOL VRRM VB20M120C 120 20 10 120 10 000 - 40 to + 150 V/μs °C A UNIT V Re...