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VBT1045BP Dataheets PDF



Part Number VBT1045BP
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet VBT1045BP DatasheetVBT1045BP Datasheet (PDF)

VBT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS® TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Compliant to RoHS Directive 2011/65/EU 1 VBT1045BP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a.

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VBT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS® TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Compliant to RoHS Directive 2011/65/EU 1 VBT1045BP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.52 V 150 °C 200 °C Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked www.DataSheet.co.kr per Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t  1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test SYMBOL VRRM IF(DC) (1) IFSM TOP TJ (2) VBT1045BP 45 10 100 - 40 to + 150 200 UNIT V A A °C °C Revision: 23-Feb-12 Document Number: 89452 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ VBT1045BP www.vishay.com Vishay General Semiconductor TEST CONDITIONS IF = 5 A IF = 10 A IF = 5 A IF = 10 A TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) SYMBOL TYP. 0.50 0.57 0.41 0.52 5 MAX. 0.68 0.64 500 15 μA mA V UNIT ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage Reverse current VR = 45 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJC VBT1045BP 3.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-263AB TO-263AB PREFERRED P/N VBT1045BP-E3/4W VBT1045BP-E3/8W UNIT WEIGHT (g) 1.37 1.37 PACKAGE CODE 4W 8W BASE QUANTITY 50/tube 800/reel DELIVERY MODE Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) www.DataSheet.co.kr 12 10 100 Instantaneous Forward Current (A) DC Forward Current (A) TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 8 6 4 2 0 0 25 50 75 100 125 150 175 200 DC Forward Current at Thermal Equilibrium TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Revision: 23-Feb-12 Document Number: 89452 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ VBT1045BP www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) 10 Junction to Case Instantaneous Reverse Current (mA) 100 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 20 40 60 80 100 0.001 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics 10 000 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 www.DataSheet.co.kr 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) Revision: 23-Feb-12 Document Number: 89452 3 For technical questions within your region: [email protected], [email protected], Dio.


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