New Product
VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF ...
New Product
VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
Not recommended for PCB bottom side wave mounting Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT1045C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
www.DataSheet.co.kr
per
Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM TJ, TSTG SYMBOL VRRM VBT1045C 45 10 A 5 100 - 40 to + 150 A °C UNIT V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range
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