New Product
VT3080S, VFT3080S, VBT3080S, VIT3080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
2 1 VT3080S
PIN 1 PIN 2 CASE
3 1 VFT3080S
PIN 1 PIN 2
2
3
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in
PIN 3
PIN 3
TO-263AB K K
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
2 3
A NC 1 VBT3080S
NC A K HEATSINK
VIT3080S
PIN 1 PIN 2 K
MECHANICAL DATA
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PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 80 V 200 A 0.73 V 150 °C
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM EAS IRRM VAC TJ, TSTG VT3080S VFT3080S VBT3080S VIT3080S UNIT V A A mJ A V °C 80 30 200 250 1.0 1500 - 55 to + 150
Document Number: 89169 Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
New Product
VT3080S, VFT3080S, VBT3080S, VIT3080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 15 A Instantaneous forward voltage IF = 30 A IF = 5 A IF = 15 A IF = 30 A Reverse current VR = 80 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) TA = 25 °C SYMBOL VBR TYP. 80 (minimum) 0.47 0.61 0.82 0.39 0.57 0.73 70 23 MAX. 0.95 0.82 1000 45 µA mA V UNIT V
Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance SYMBOL RθJC VT3080S 1.5 VFT3080S 5.0 VBT3080S 1.5 VIT3080S 1.5 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N VT3080S-E3/4W VFT3080S-E3/4W VBT3080S-E3/4W VBT3080S-E3/8W VIT3080S-E3/4W UNIT WEIGHT (g) 1.88
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PACKAGE CODE 4W 4W 4W 8W 4W
BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube
DELIVERY MODE Tube Tube Tube Tape and reel Tube
1.75 1.37 1.37 1.46
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35 Resistive or Inductive Load 30 V(B,I)T3080S D = 0.5 D = 0.8 25 D = 0.2 20 D = 0.1 15 T 10 5 D = tp/T 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 tp D = 1.0 D = 0.3
Average Forward Current (A)
25 20 15 10 5 Mounted on Specific Heatsink 0 VFT3080S
Average Power Loss (W)
30
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 89169 Revision: 08-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/
New Product
VT3080S, VFT3080S, VBT3080S, VIT3080S
Vishay General Semiconductor
100
10 000
Instantaneous Forward Current (A)
10
TA = 125 °C
Junction Capacitance (pF)
TA = 150 °C
TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
1000
1
TA = 100 °C
TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 0.1 1 10 100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
TA = 150 °C 10 TA = 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
10 Junction to Case VFT3080S
1
TA = 100 °C
V(B,I)T3080S 1
0.1 TA = 25 °C 0.01
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0.001 20
30
40
50
60
70
80
90
100
0.1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
t - Pulse Duration (s).