DatasheetsPDF.com

VBT3080S Dataheets PDF



Part Number VBT3080S
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet VBT3080S DatasheetVBT3080S Datasheet (PDF)

New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 1 VT3080S PIN 1 PIN 2 CASE 3 1 VFT3080S PIN 1 PIN 2 2 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD .

  VBT3080S   VBT3080S


Document
New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 1 VT3080S PIN 1 PIN 2 CASE 3 1 VFT3080S PIN 1 PIN 2 2 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in PIN 3 PIN 3 TO-263AB K K TO-262AA TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 2 3 A NC 1 VBT3080S NC A K HEATSINK VIT3080S PIN 1 PIN 2 K MECHANICAL DATA www.DataSheet.co.kr PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 80 V 200 A 0.73 V 150 °C Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM EAS IRRM VAC TJ, TSTG VT3080S VFT3080S VBT3080S VIT3080S UNIT V A A mJ A V °C 80 30 200 250 1.0 1500 - 55 to + 150 Document Number: 89169 Revision: 08-Sep-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 15 A Instantaneous forward voltage IF = 30 A IF = 5 A IF = 15 A IF = 30 A Reverse current VR = 80 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) TA = 25 °C SYMBOL VBR TYP. 80 (minimum) 0.47 0.61 0.82 0.39 0.57 0.73 70 23 MAX. 0.95 0.82 1000 45 µA mA V UNIT V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJC VT3080S 1.5 VFT3080S 5.0 VBT3080S 1.5 VIT3080S 1.5 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N VT3080S-E3/4W VFT3080S-E3/4W VBT3080S-E3/4W VBT3080S-E3/8W VIT3080S-E3/4W UNIT WEIGHT (g) 1.88 www.DataSheet.co.kr PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube 1.75 1.37 1.37 1.46 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 Resistive or Inductive Load 30 V(B,I)T3080S D = 0.5 D = 0.8 25 D = 0.2 20 D = 0.1 15 T 10 5 D = tp/T 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 tp D = 1.0 D = 0.3 Average Forward Current (A) 25 20 15 10 5 Mounted on Specific Heatsink 0 VFT3080S Average Power Loss (W) 30 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89169 Revision: 08-Sep-09 Datasheet pdf - http://www.DataSheet4U.net/ New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor 100 10 000 Instantaneous Forward Current (A) 10 TA = 125 °C Junction Capacitance (pF) TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 1 TA = 100 °C TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance TA = 150 °C 10 TA = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 10 Junction to Case VFT3080S 1 TA = 100 °C V(B,I)T3080S 1 0.1 TA = 25 °C 0.01 www.DataSheet.co.kr 0.001 20 30 40 50 60 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics t - Pulse Duration (s).


VBT3045BP VBT3080S VBT4045BP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)