VBT4045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass P...
VBT4045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
TO-263AB
K
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
Compliant to RoHS Directive 2011/65/EU
1
TYPICAL APPLICATIONS
PIN 1 PIN 2 K HEATSINK
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C
Case: TO-263AB Epoxy meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked
www.DataSheet.co.kr
per
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t 1 h SYMBOL VRRM IF(DC)
(1)
VBT4045BP 45 40 240 - 40 to + 150 200
UNIT V A A °C °C
IFSM TOP TJ (1)
Notes (1) With hea...