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VF30M120C Dataheets PDF



Part Number VF30M120C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VF30M120C DatasheetVF30M120C Datasheet (PDF)

New Product VF30M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VF30M120C PI.

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New Product VF30M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VF30M120C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 120 V 150 A 0.68 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per www.DataSheet.co.kr MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VF30M120C 120 30 15 150 10 000 1500 - 40 to + 150 V/μs V °C A UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rating of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range Revision: 11-Jan-12 Document Number: 89470 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ New Product VF30M120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode IF = 15 A IF = 5 A IF = 7.5 A IF = 15 A VR = 90 V Reverse current per diode VR = 120 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 20 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.60 0.67 0.87 0.52 0.57 0.68 3.5 2 5 MAX. 0.98 0.76 800 27 μA mA μA mA V UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC VF30M120C 4.5 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE ITO-220AB PREFERRED P/N VF30M120C-M3/4W UNIT WEIGHT (g) 1.75 www.DataSheet.co.kr PACKAGE CODE 4W BASE QUANTITY 50/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 40 14.0 Resistive or Inductive Load 35 12.0 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 0.8 30 25 20 15 10 5 Average Power Loss (W) 10.0 8.0 6.0 D = 1.0 T 4.0 2.0 0.0 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 D = tp/T 0 2 4 6 8 10 12 14 tp 16 18 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 11-Jan-12 Document Number: 89470 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ New Product VF30M120C www.vishay.com 100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 Vishay General Semiconductor Instantaneous Forward Current (A) TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C Junction Capacitance (pF) 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Reverse Current (mA) Transient Thermal Impedance (°C/W) 100 10 1 0.1 0.01 TA = 25 °C 0.001 0.0001 20 40 60 80 100 TA = 150 °C TA = 125 °C TA = 100 °C 10 Junction to Case 1 www.DataSheet.co.kr 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 45° REF.


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