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VT1045C

Vishay

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

New Product VT1045C, VIT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultr...


Vishay

VT1045C

File Download Download VT1045C Datasheet


Description
New Product VT1045C, VIT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS TO-220AB ® Trench MOS Schottky technology TO-262AA Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT1045C PIN 1 PIN 3 3 1 VIT1045C PIN 1 PIN 3 2 3 Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified www.DataSheet.co.kr Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forw...




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