Drive Nch MOSFET
NotNeRewcDoemsimgennsded for
R6018ANX
Nch 600V 18A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 0.27Ω 18A 5...
Description
NotNeRewcDoemsimgennsded for
R6018ANX
Nch 600V 18A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 0.27Ω 18A 50W
Outline
TO-220FM
(1)(2)(3)
Features 1) Low on-resistance.
Inner circuit
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
(1) Gate (2) Drain (3) Source
4) Drive circuits can be simple.
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
Packaging specifications Packing
Bulk
Reel size (mm)
-
Application Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
500
-
Marking
R6018ANX
Absolute maximum ratings (Ta = 25°C) Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt
Tc = 25°C Tc = 100°C
VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5
600 ±18 ±8.6 ±72 ±30 21.6 3.5
9 50 150 −55 to +150 15
V A A A V mJ mJ A W °C °C V/ns
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1/13
2012.01 - Rev.B
NotNeRewcDoemsimgennsded for
R6018ANX Absolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 18A Tj = 125°C
Values 50
Unit V/ns
Thermal resistance Parameter
Thermal resistance, junction - case Thermal resistanc...
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