Data Sheet
Schottky Barrier Diode
RB055L-30
lApplications General rectification lDimensions (Unit : mm) lLand size figu...
Data Sheet
Schottky Barrier Diode
RB055L-30
lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0
2.6±0.2
lFeatures 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF
1.2±0.3
2.0
4.5±0.2
4 ①
5 ②
0.1±0.02 0.1
5.0±0.3
1.5±0.2
2.0±0.2
PMDS
lConstruction Silicon epitaxial planer
ROHM : PMDS ① ② Manufacture Date
lStructure
lTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ 1.55±0.05
1.75±0.1
4.2
0.3
5.5±0.05
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φ 1.55 2.9±0.1 4.0±0.1 2.8MAX
lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Mounted on Alumina board, Tc=110°C MAX. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltagae Reverse current IR
Limits 30 30 3 55 150 -55 to +150
Unit V V A A C C
Min. -
Typ. -
Max. 0.55 50
Unit V μA
Conditions IF=3.0A VR=30V
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5.3±0.1 0.05 9.5±0.1
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
12±0.2
RB055L-30
Data Sheet
10 Ta=150°C
100000 Ta=125°C Ta=100°C 10000 REVERSE CURRENT:IR(mA) Ta=150°C
1 FORWARD CURRENT:IF(A)
Ta=125°C
0.1
Ta=100°C
1000
Ta=75°C 0.01
100 Ta=75°C 10 Ta=25°C
0.001
Ta=25°C
0.0001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1 0 ...