RB070M-30

RB070M-30 Diodes Schottky barrier diode RB070M-30 zApplications General rectification (Common cathode dual chip) zDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 zLand size figure 1.2 0.85 zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability 0.9±0.1 2.6±0.1 3.5±0.2 PMDU zStructure zConstruction Silicon epitaxial planar ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 www.DataSheet.co.kr 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) ∗ Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 1.5 30 150 −40 to 150 Unit V V A A °C °C ∗ Glass epoxy substrate at the time of assembler, half sine wave at 180°. zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. 0.37 0.44 9 Max. 0.43 0.49 50 Unit V V µA Conditions IF=0.5A IF=1.5A VR=30V ∗Please pay attention to static electricity when handling. Rev.B 3.05 ① 1/3 Datasheet pdf - http://www.DataSheet4U.net/ RB070M-30 Diodes zElectrical characteristic curves 10 Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 1 Ta=150℃ Ta=25℃ 0.1 Ta=-25℃ 10000 1000 100 Ta=25℃ 10 1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTER...