RB225NS-40
Schottky Barrier Diode
●Outline
VR
40
V
Io
30
A
IFS...
RB225NS-40
Schottky Barrier Diode
●Outline
VR
40
V
Io
30
A
IFSM
100
A
●Features High reliability Power mold type Cathode common dual type Low VF
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB225NS40
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40
V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1)
VR
Reverse direct voltage
40
V
Io
60Hz half sin waveform,resistive load, Io/2 per diode,Tc=70℃Max.
30
A
IFSM
60Hz half sin waveform, non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Storage temperature
Tstg
-
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/RθJA.
Attention
-40 ~ 150
℃
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1/6
2019/05/27_Rev.003
RB225NS-40
Data sheet
●Electrical Characteristics Parameter
Forward voltage(1) Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF
IF=15A
IR
VR=40V
Min. Typ. Max. Unit - 0.53 0.63 V - 0.08 0.50 ...