2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=...
2SC3927
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3927 900 550 7 10(Pulse15) 5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
(Ta=25°C) 2SC3927 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V MHz pF
20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.75 IB2 (A) –1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.5max
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
10
1. 2A
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E(s a t) (V ) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
10 (V C E =4V)
1A
80 0m A
60 0m A
Collector Current I C (A)
–55˚C (C
25˚C (C
ase Temp)
p)
6
400m A
ase Tem
Collector Current I C (A)
8
1
V B E (sat) 8
6
p)
mp
4
4
eT
200mA
125˚C
(Case 25˚C
Ca...