RB501VM-40

Data Sheet Schottky Barrier Diode RB501VM-40 Applications Low current rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 0.9MIN. 0.8MIN. 1.7±0.1 2.5±0.2 Features 1)Small mold type. (UMD2) 2)High reliability UMD2 Construction Silicon epitaxial planer 0.3±0.05 0.7±0.2 　　　 0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 www.DataSheet.co.kr 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current Capacitance between terminals IR Ct Limits 45 40 100 1 125 - 40 to +125 Unit V V mA A °C °C Min. - Typ. 6.0 Max. 0.55 0.34 30 - Unit V V μA pF IF=100mA IF=10mA Conditions VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/4 2011.11 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 2.8±0.1 2.1 RB501VM-40 　 Data Sheet 100 Ta=125°C FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(µA) 10000 Ta=125°C 1000 Ta=75°C 100 Ta=75°C 10 Ta=25°C 10 Ta=25°C 1 Ta=−25°C 0.1 Ta=−25°C 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0...