RB530VM-30

Schottky Barrier Diode RB530VM-30 Applications General rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Datasheet Land size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability Construction Silicon epitaxial planer 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) UMD2 Structure Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg 1.40±0.1 4.0±0.1 φ1.05 Limits 30 30 100 500 150 40 to 150 Unit V V mA mA C C 1.0±0.1 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Forward voltage VF - - 0.45 Reverse current IR - - 0.5 Unit Conditions V IF=10mA μA VR=10V www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/4 2015.04 - Rev.B RB530VM-30 　 Data Sheet FORWARD CURRENT:IF(mA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=125°C 10 Ta=75°C 1 Ta=25°C 0.1 0.01 0 Ta=25°C 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 100 f=1MHz 10 1 0 400 300 200 100 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Ta=25°C VR=10V n=30pcs AVE:129.0nA IR DISPERSION MAP CAPACITAN...