RB551VM-30

Data Sheet Schottky Barrier Diode RB551VM-30 lApplications High speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 3)High reliability UMD2 lConstruction Silicon epitaxial 2.5±0.2 lFeatures 1)Small mold type. (UMD2) 2)Low VF 0.8MIN. 0.3±0.05 0.7±0.2 　　　 0.1 lStructure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.75±0.1 0.3±0.1 www.DataSheet.co.kr 3.5±0.05 8.0±0.2 1.40±0.1 4.0±0.1 φ 1.05 1.0±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 20 500 2 125 -40 to +125 Unit V V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR Min. - Typ. - Max. 0.36 0.47 100 Unit V V μA IF=100mA IF=500mA VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/3 2011.06 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 2.8±0.1 2.1 RB551VM-30 　 Data Sheet 1000 Ta=125℃ 100000 Ta=125℃ 10000 REVERSE CURRENT:IR(uA) Ta=75℃ 1000 100 10 1 0.1 0 100 200 300 400 500 0 10 20 30 Ta=25℃ 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) 100 Ta=75℃ Ta=25℃ 10 10 Ta=-25℃ Ta=-25℃ 1 0.1 FORWARD VOLTAGE : VF(mV) VF-IF...