RBQ10B45A

Data Sheet Schottky Barrier Diode RBQ10B45A lApplications General rectification lDimensions (Unit : mm) 6.5±0.2 2.3±0.2 0.1 lLand size figure (Unit : mm) 6.0 0.5±0.1 C0.5 5.1±0.2 0.1 1.6 ① 0.8 min 0.75 0.65±0.1 2.5 9.5±0.5 1.6 3)High reliability 0.9 （1） （2） （3） CPD 2.3 2.3 lConstruction Silicon epitaxial planer 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 lStructure ROHM : CPD JEITA : SC-63 ① Manufacture Date lTaping specifications (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc)(*2) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode. (*2)Per diode. lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current Limits 45 45 10 50 150 -40 to +150 Unit V V A A °C °C Symbol VF IR Min. - Typ. - Max. 0.65 0.15 Unit V mA Conditions IF=5A VR=45V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 3.0 2.0 5.5±0. 3 lFeatures 1)Power mold type.(CPD) 2)Low IR 1.5±0.3 6.0 RBQ10B45A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C Ta=75°C 1000 Ta=125°C 100 Ta=75°C 10 0.1 Ta=25°C 1 Ta=25°C 0.1 Ta=-25°C Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 0.01 0 10 20 30 40 50 FORWARD VOLTA...