RBQ10NS65A

Data Sheet Schottky Barrier Diode RBQ10NS65A lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm) lGeneral rectification 1)Cathode Common Dual type.（LPDS） 2)Low IR. BQ10NS 65A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions（Unit : mm） ② ③ www.DataSheet.co.kr ●Absolute maximum ratings(Tc=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 65 VR Reverse voltage (DC) 65 Average rectified forward current (*1) 10 Io IFSM Forward current surge peak (60Hz・1cyc)(*2) 50 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C. lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current Unit V V A A °C °C Symbol VF IR Min. - Typ. - Max. 0.69 0.15 Unit V mA IF=5A VR=65V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RBQ10NS65A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C 1000 Ta=125°C 100 Ta=75°C Ta=75°C 10 0.1 Ta=25°C 1 Ta=25°C Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 0.1 Ta=-25°C 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1000 CAPACITANCE BETWEEN TERM...