Schottky Barrier Diode
RBQ20T45A
Datasheet
lApplication
lDimensions (Unit : mm)
lStructure
General rectification
4...
Schottky Barrier Diode
RBQ20T45A
Datasheet
lApplication
lDimensions (Unit : mm)
lStructure
General rectification
4.5±0.3 0.1
10.0±0.3 0.1
2.8±0.2 0.1
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
lFeatures
1) Cathode common type.
2) Low IR
3) High reliability
1
Anode Cathode Anode
for
d lConstruction nde s Silicon epitaxial planar
1.2 1.3 0.8
(1) (2) (3)
ROHM TO220FN 1 Manufacture Date
0.7±0.1 0.05
2.6±0.5
ommeesign lAbsolute maximum ratings (Tc= 25°C)
D Parameter
Symbol
Limits
Unit
c Reverse voltage (repetitive)
VRM
45
V
e w Reverse voltage (DC)
VR
45
V
R e Average rectified forward current (*1)
Io
20
A
Forward current surge peak (60Hz・1cyc) IFSM
100
A
t N Junction temperature
Tj
150
°C
o Storage temperature
Tstg
-40 to +150
°C
N(*1) Rating of per diode : Io/2
lElectrical characteristics (Tj = 25°C) Parameter
Forward voltage Reverse current
Symbol Min.
VF
-
IR
-
Typ. Max. - 0.65 - 300
Unit
Conditions
V IF=10A
mA VR=45V
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1/5
2013.06 - Rev.B
RBQ20T45A lElectrical characteristic curves
Data Sheet
FORWARD CURRENT : IF(A)
100
100000
REVERSE CURRENT : IR(mA)
r 10
Ta = 150°C
Ta = 125°C
fo 1
Ta = 75°C
d 0.1
Ta = 25°C
e Ta = -25°C d 0.01
0 100 200 300 400 500 600 700
n s FORWARD VOLTAGE : VF(mV) e n VF-IF CHARACTERISTICS
10000
Ta = 150°C
1000
Ta = 125°C
100 Ta = 75°C
10
Ta = 25°C 1
0.1
0.01 0
Ta = -25°C
10
20
30
40
50
REVE...
