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2SC3931 Dataheets PDF



Part Number 2SC3931
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3931 Datasheet2SC3931 Datasheet (PDF)

Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 1.25±0.10 2.1±0.1 5˚ • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 0.2±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 1.3±0.1 2.0±0.2 10˚ Parameter Symbol Rating Unit e pe) Collecto.

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Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 1.25±0.10 2.1±0.1 5˚ • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 0.2±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 1.3±0.1 2.0±0.2 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 0 to 0.1 0.9±0.1 0.9–+00..12 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 15 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C Marking Symbol: U 1: Base 2: Emitter 3:Collector EIAJ: SC-70 SMini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V M is con inten Base-emitter voltage VBE VCB = 6 V, IE = −1 mA 720 mV /Dis ma Forward current transfer ratio * hFE VCB = 6 V, IE = −1 mA 65 260  D ance type, Transition frequency fT VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz ten ce Common-emitter reverse transfer ain nan capacitance Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF M inte Power gain d ma Noise figure GP VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB (plane Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank C D hFE 65 to 160 100 to 260 Publication date: March 2003 SJC00142BED 1 2SC3931 Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) PC  Ta 200 160 120 80 IC  VCE IC  IB 12 Ta = 25°C 12 10 IB = 100 µA 10 VCE = 6 V Ta = 25°C 80 µA 8 8 60 µA 6 6 40 µA 4 4 40 20 µA 2 2 0 0 40 80 120 160 Ambient temperature Ta (°C) 0 0 6 12 18 Collector-emitter voltage VCE (V) 0 0 60 120 180 Base current IB (µA) Collector-emitter saturation voltage VCE(sat) (V) e/ pe) IC  VBE c ty 30 n d ge. ed VCE=6V sta tinu 25°C le n 25 a elifecyc disco Ta = 75°C −25°C , 20 n uroduct d typed 15 te tinfourP ntinue 10 in n llowing ddisco 5 des fo , plane 0 a o clu pe 0 0.4 0.8 1.2 1.6 2.0 c d in e ty Base-emitter voltage VBE (V) VCE(sat)  IC 100 IC / IB = 10 10 1 25°C Ta = 75°C 0.1 −25°C 0.01 0.1 1 10 100 Collector current IC (mA) Forward current transfer ratio hFE hFE  IC 360 VCE = 6 V 300 240 180 Ta = 75°C 25°C −25°C 120 60 0 0.1 1 10 100 Collector current IC (mA) M is/Discontimnuaeintenanc fT  IE Zrb  IE Cre  VCE e e, 1200 Dintenancnce typ 1000 120 VCB = 6 V Ta = 25°C 100 VCB = 6 V 2.4 f = 2 MHz Ta = 25°C 2.0 IC = 1 mA f = 10.7 MHz Ta = 25°C Ma aintena 800 80 1.6 (planed m 600 60 1.2 400 40 0.8 Common-emitter reverse transfer capacitance Cre (pF) Reverse transfer impedance Zrb (Ω) 200 20 0.4 0 − 0.1 −1 −10 −100 Emitter current IE (mA) 0 − 0.1 −1 −10 Emitter current IE (mA) 0 0.1 1 10 100 Collector-emitter voltage VCE (V) Transition frequency fT (MHz) 2 SJC00142BED (pF) Cob Collector output capacitance (Common base, input open circuited) Input susceptance bie (mS) IE = − 0.5 mA −1 mA 2SC3931 Cob  VCB 1.2 IE = 0 f = 1 MHz Ta = 25°C 1.0 0.8 0.6 GP  IE NF  IE 40 12 f = 100 MHz f = 100 MHz Rg = 50 Ω Ta = 25°C 10 Rg = 50 kΩ Ta = 25°C 30 VCE = 10 V 8 6V 20 6 Noise figure NF (dB) Power gain GP (dB) 0.4 4 VCE = 6 V, 10 V 10 0.2 0 0 5 10 15 20 25 30 Collector-base voltage VCB (V) 0 − 0.1 −1 −10 −100 Emitter current IE (mA) 2 0 − 0.1 −1 −10 −100 Emitter current IE (mA) e/ pe) bie  gie c e. d ty 20 yie = gie + jbie n d tag ue VCE = 10 V −4 mA 150 s tin 100 le on 16 a e cyc isc −2mA life , d 100 −7 mA n u ct ed 12 du typ 58 Forward transfer susceptance bfe (mS) − 0.4 mA Reverse transfer susceptance bre (mS) te tin urProtinued 8 58 ing fo iscon 25 in n llow dd 4 25 es fo plane f = 10.7 MHz a o lud e, 0 c p 0 3 6 9 12 15 c d in e ty Input conductance gie (mS) M is/Discontimnuaeintenanc boe  goe e e, 1.2 c p 150 D nan e ty −2mA inte nc 1.0 a −4 mA a n 100 M inte 0.8 a −7 mA ned m 0.6 (pla 58 bre  gre 0 yre = gre + jbre VCE = 10 V −1 10.7 25 −4 mA −2 −1 mA 58 −3 IE = −7 mA −4 100 −5 f = 150 MHz −6 − 0.5.


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