Document
Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
0.3+–00..01
Unit: mm
0.15+–00..0150
(0.425)
■ Features
3
1.25±0.10 2.1±0.1 5˚
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
1
2
(0.65) (0.65)
0.2±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
1.3±0.1 2.0±0.2
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
0 to 0.1 0.9±0.1 0.9–+00..12
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
15
mA
lifecy , dis Collector power dissipation
PC
150
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
Marking Symbol: U
1: Base 2: Emitter 3:Collector EIAJ: SC-70 SMini3-G1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
3
V
M is con inten Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720
mV
/Dis ma Forward current transfer ratio *
hFE VCB = 6 V, IE = −1 mA
65
260
D ance type, Transition frequency
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
450 650
MHz
ten ce Common-emitter reverse transfer ain nan capacitance
Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8 1.0
pF
M inte Power gain d ma Noise figure
GP VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
dB
(plane Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
C
D
hFE
65 to 160 100 to 260
Publication date: March 2003
SJC00142BED
1
2SC3931
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
PC Ta
200
160
120
80
IC VCE
IC IB
12
Ta = 25°C
12
10
IB = 100 µA 10
VCE = 6 V Ta = 25°C
80 µA
8
8
60 µA
6
6
40 µA
4
4
40
20 µA
2
2
0
0
40
80
120
160
Ambient temperature Ta (°C)
0
0
6
12
18
Collector-emitter voltage VCE (V)
0
0
60
120
180
Base current IB (µA)
Collector-emitter saturation voltage VCE(sat) (V)
e/ pe) IC VBE c ty 30
n d ge. ed VCE=6V
sta tinu 25°C le n 25
a elifecyc disco Ta = 75°C −25°C
, 20
n uroduct d typed 15 te tinfourP ntinue 10 in n llowing ddisco 5
des fo , plane 0
a o clu pe 0 0.4 0.8 1.2 1.6 2.0 c d in e ty Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
25°C Ta = 75°C 0.1
−25°C
0.01
0.1
1
10
100
Collector current IC (mA)
Forward current transfer ratio hFE
hFE IC
360 VCE = 6 V
300
240
180
Ta = 75°C
25°C
−25°C 120
60
0
0.1
1
10
100
Collector current IC (mA)
M is/Discontimnuaeintenanc fT IE
Zrb IE
Cre VCE
e e, 1200
Dintenancnce typ 1000
120 VCB = 6 V Ta = 25°C
100
VCB = 6 V
2.4
f = 2 MHz
Ta = 25°C 2.0
IC = 1 mA f = 10.7 MHz Ta = 25°C
Ma aintena 800
80
1.6
(planed m 600
60
1.2
400
40
0.8
Common-emitter reverse transfer capacitance Cre (pF)
Reverse transfer impedance Zrb (Ω)
200
20
0.4
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
0
− 0.1
−1
−10
Emitter current IE (mA)
0
0.1
1
10
100
Collector-emitter voltage VCE (V)
Transition frequency fT (MHz)
2
SJC00142BED
(pF)
Cob
Collector output capacitance (Common base, input open circuited)
Input susceptance bie (mS) IE = − 0.5 mA −1 mA
2SC3931
Cob VCB
1.2
IE = 0
f = 1 MHz
Ta = 25°C 1.0
0.8
0.6
GP IE
NF IE
40
12 f = 100 MHz
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
10
Rg = 50 kΩ Ta = 25°C
30
VCE = 10 V
8 6V
20
6
Noise figure NF (dB)
Power gain GP (dB)
0.4
4
VCE = 6 V, 10 V
10
0.2
0 0 5 10 15 20 25 30 Collector-base voltage VCB (V)
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
2
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
e/ pe) bie gie
c e. d ty 20 yie = gie + jbie n d tag ue VCE = 10 V −4 mA
150
s tin 100 le on 16
a e cyc isc −2mA life , d 100
−7 mA
n u ct ed 12 du typ 58
Forward transfer susceptance bfe (mS)
− 0.4 mA
Reverse transfer susceptance bre (mS)
te tin urProtinued 8 58
ing fo iscon 25
in n llow dd 4
25
es fo plane f = 10.7 MHz
a o lud e, 0
c p 0
3
6
9
12 15
c d in e ty Input conductance gie (mS)
M is/Discontimnuaeintenanc boe goe
e e, 1.2 c p 150
D nan e ty −2mA
inte nc 1.0 a −4 mA a n 100
M inte 0.8 a −7 mA
ned m 0.6 (pla 58
bre gre
0 yre = gre + jbre VCE = 10 V
−1
10.7 25
−4 mA
−2
−1 mA
58
−3
IE = −7 mA
−4
100
−5
f = 150 MHz −6 − 0.5.