RBQ30NS65A

RBQ30NS65A Schottky Barrier Diode 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 65 V Io 30 A IFSM 100 A ●Features High reliability Power mold type Cathode common dual type Low IR ●Inner Circuit Data sheet 　　　 　 　 　 　 　 　 　 　 　　　 ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ30NS65A ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 65 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1) VR Reverse direct voltage 65 V Io IFSM 60Hz half sin waveform，resistive load， Io/2 per diode，Tc=80℃Max. 60Hz half sin waveform， non-repetitive，per diode，Ta=25℃ 30 100 A A Tj - 150 ℃ Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dPd/dTj<1/RθJA. Attention -55 ～ 150 ℃ www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved. 　 　 　 　 　　 　 　 1/6 　 2019/05/27_Rev.003 RBQ30NS65A 　 　 　 　 　 　 　 　 　 　 　 　 　 　　　　　　　　　 Data sheet ●Electrical Characteristics Parameter Forward voltage(1) Reverse current(1) Note (1) Value per diode (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=15A IR1 VR=60V IR2 VR=65V Min. Typ. Max. Unit - 0.64 0.69 V - 25 120 μA - 35 200 μA...