2SC3934

Transistors 2SC3934 Silicon NPN epitaxial planar type For high-frequency wide-band low-noise amplification Unit: mm (0.425) 0.3+–00..01 ■ Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 12 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2.5 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 30 mA lifecy , dis Peak collector current ICP 50 mA n u duct typed Collector power dissipation PC 150 mW te tin Pro ed Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 1U in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 100 nA tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 1 µA M is con inten Forward current transfer ratio hFE VCE = 10 V, IC = 10 mA 40  /Dis ma Transition frequency fT VCE = 10 V, IC = 10 mA, f = 0.8 GHz 4....