CTLSH05-4M521 SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEM...
CTLSH05-4M521 SURFACE MOUNT LOW VF SILICON
SCHOTTKY DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CTLSH05-4M521 Low VF
Schottky Diode is a high quality
Schottky Diode designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 0.9W, and a very small package footprint (comparable to the SOT-563), this leadless package design is capable of dissipating over 3 times the power of similar devices in comparable sized surface mount packages. FEATURES:
Very Small Package Size Current (IF=0.5A) Low Forward Voltage Drop (VF=0.47V MAX @ 0.5A) High Thermal Efficiency Small TLM 2x1mm case
Top View
Bottom View
TLM521 CASE MARKING CODE: CA
APPLICATIONS:
DC/DC Converters Voltage Clamping Protection Circuits MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤ 1ms Forward Surge Current, tp = 8ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: SYMBOL IR IR BVR VF VF VF VF VF CT TEST CONDITIONS VR= 10V VR= 30V IR= 500μA IF= 100μA IF= 1.0mA IF= 10mA IF= 100mA IF= 500mA VR=1.0V, f=1.0MHz SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg
www.DataSheet.co.kr
Battery Powered Portable Equipment
UNITS 40 500 3.5 10 0.9 -65 to +150 139 V mA A A W* °C °C/W*
ΘJA (TA=25°C unless otherwise noted) MIN
MAX 20 100
UNITS μA μA V V V V V V pF
40 0.13 0.21 0.27 0.35...