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CTLSH1-40M832D Dataheets PDF



Part Number CTLSH1-40M832D
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SURFACE MOUNT DUAL HIGH CURRENT LOW VF SILICON SCHOTTKY DIODES
Datasheet CTLSH1-40M832D DatasheetCTLSH1-40M832D Datasheet (PDF)

CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 1.65W, and a very small package footprint (approximately equal to the SOT-23), this leadless package design is capable of dissipating up to 4 times the pow.

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CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 1.65W, and a very small package footprint (approximately equal to the SOT-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. Top View Bottom View FEATURES: • Dual Chip Device • High Current (IF=1.0A) • Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A) • High Thermal Efficiency • Small TLM 3x2mm case TLM832D CASE MARKING CODE: CFA APPLICATIONS: • DC/DC Converters • Reverse Battery Protection MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤ 1ms Forward Surge Current, tp = 8ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: SYMBOL IR IR IR BVR VF VF VF VF CJ TEST CONDITIONS VR= 5V VR= 8V VR= 15V IR= 100μA IF= 10mA IF= 100mA IF= 500mA IF= 1.0A VR= 4.0V, f=1.0MHz 50 40 0.29 0.36 0.45 0.55 SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg www.DataSheet.co.kr • Battery Powered Portable Equipment UNITS 40 1.0 3.5 10 1.65 V A A A W* °C °C/W* -65 to +150 75.8 ΘJA (TA=25°C unless otherwise noted) MIN TYP MAX 10 20 50 UNITS μA μA μA V V V V V pF *FR-4 Epoxy PCB with copper mounting pad area of 54mm2 R2 (27-April 2006) Datasheet pdf - http://www.DataSheet4U.net/ Central TM CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Semiconductor Corp. TLM832D CASE - MECHANICAL OUTLINE Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) www.DataSheet.co.kr For standard mounting refer to TLM832D Package Details LEAD CODE: 1) 2) 3) 4) 5) 6) 7) 8) ANODE D1 ANODE D1 ANODE D2 ANODE D2 CATHODE D2 CATHODE D2 CATHODE D1 CATHODE D1 MARKING CODE: CFA R2 (27-April 2006) Datasheet pdf - http://www.DataSheet4U.net/ .


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