PN2221

PN2221 PN2221A PN2222 PN2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2221, PN2222 series devices are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg PN2221 PN2222 PN2221A PN2222A 60 75 30 40 5.0 6.0 800 625 -65 to +150 UNITS V V V mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=50V ICBO VCB=60V ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10µA BVCEO IC=10mA BVEBO IE=10µA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC=150mA hFE VCE=1.0V, IC=150mA hFE VCE=10V, IC=500mA (PN2221, PN2222) hFE VCE=10V, IC=500mA (PN2221A, PN2222A) fT VCE=20V, IC=20mA, f=100MHz (except PN2222A) fT VCE=20V, IC=20mA, f=100MHz (PN2222A) Cob VCB=10V, f=100kHz ton VCC=30V, IC=150mA, IB=15mA toff VCC=30V, IC=150mA, IB1=IB2=15mA PN2221 PN2222 MIN MAX - 10 - - - - - 10 60 - 30 - 5.0 - - 0.4 - 1.6 0.6 1.3 - 2.6 PN2221 PN2221A MIN MAX 20 - 25 - 35 - 40 120 20 - 20 - 25 - 2...