RCD080N25

0.9NotNeRewcDoemsimgennsded for 5.5 1.5 Data Sheet 1.5 9.5 10V Drive Nch MOSFET RCD080N25  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCD080N25 Taping TL 2500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature VDSS 250 VGSS 30 ID *3 8 IDP *1 32 IS *3 8 ISP *1 32 IAS *2 4 EAS *2 4.67 PD *4 85 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Unit V V A A A A A mJ W C C  Thermal resistance Parameter Channel to Case Symbol Rth (j-c) * * TC=25°C * Limited only by maximum channel temperature allowed. Limits 1.46 Unit C / W (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 2016.02 - Rev.B NotNeRewcDoemsimgennsded for RCD080N25  Electrical characteri...