DatasheetsPDF.com

RCJ330N25 Dataheets PDF



Part Number RCJ330N25
Manufacturers Rohm
Logo Rohm
Description N-Channel MOSFET
Datasheet RCJ330N25 DatasheetRCJ330N25 Datasheet (PDF)

Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET or Features f 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage d VGSS garanteed to be ±30V . 4) High package power.  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 9.0 13.1 1.0 3.0 1.24 2.54 0.78 0.4 5.08 2.7 (1) (2) (3) 1.2 de Application n s Switching e n Packaging specifications m ig Package Type Code s Basic ordering unit (pieces) RCJ330N25 Taping TL 1000   Inner cir.

  RCJ330N25   RCJ330N25



Document
Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET or Features f 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage d VGSS garanteed to be ±30V . 4) High package power.  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 9.0 13.1 1.0 3.0 1.24 2.54 0.78 0.4 5.08 2.7 (1) (2) (3) 1.2 de Application n s Switching e n Packaging specifications m ig Package Type Code s Basic ordering unit (pieces) RCJ330N25 Taping TL 1000   Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE om e Absolute maximum ratings (Ta  25°C) D Parameter Symbol Limits Unit c Drain-source voltage Gate-source voltage e w Drain current Continuous Pulsed R e Source current (Body Diode) Continuous Pulsed t Avalanche current N Avalanche energy o Power dissipation (Tc=25C) Channel temperature NRange of storage temperature VDSS 250 V VGSS 30 V ID *3 33 A IDP *1 132 A IS *3 26 A ISP *1 104 A IAS *2 16.5 A EAS *2 74.8 mJ PD 211 W Tch 150 C Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.  Thermal resistance Parameter Channel to Case * TC=25°C Symbol Limits Rth(j-c) * 0.59 Unit C / W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 2016.02 - Rev.B RCJ330N25   Data Sheet  Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS - - 100 nA VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 250 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - - 1 A VDS=250V, VGS=0V Gate threshold voltage VGS (th) 3 - 5 V VDS=10V, ID=1mA Static drain-source on-state resistance Forward transfer admittance Input capacitance r Output capacitance o Reverse transfer capacitance f Turn-on delay time Rise time Turn-off delay time d Fall time Total gate charge e Gate-source charge Gate-drain charge d *Pulsed RDS (on*) - l Yfs l* 10 Ciss - Coss - Crss - td(on) * - tr * - td(off) * - tf * - Qg * - Qgs * - Qgd * - 77 20 4500 220 130 50 200 120 140 80 25 27 105 m ID=16.5A, VGS=10V - S ID=16.5A, VDS=10V - pF VDS=25V - pF VGS=0V - pF f=1MHz - ns ID=16.5A, VDD 125V - ns VGS=10V - ns RL=7.6 - ns RG=10 - nC ID=33A, - nC VDD 125V - nC VGS=10V en ns Body diode characteristics (Source-Drain) (Ta = 25C) m ig Parameter Symbol Min. Typ. Forward Voltage VSD * - - Not RecNoemw Des *Pulsed Max. Unit Conditions 1.5 V Is=33A, VGS=0V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/6 2016.02 - Rev.B RCJ330N25   Data Sheet Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 35 Ta=25°C Pulsed 30 VGS=10.0V VGS=8.0V Fig.2 Typical Output Characteristics (Ⅱ) 35 VGS=10.0V 30 VGS=8.0V Ta=25°C Pulsed 25 25 Drain Current : ID [A] Drain Currnt : ID [A] 20 r 15 o 1.


RCD100N20 RCJ330N25 RCJ450N20


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)