Document
Data Sheet
10V Drive Nch MOSFET
RCJ330N25
Structure Silicon N-channel MOSFET
or Features f 1) Low on-resistance.
2) Fast switching speed. 3) Gate-source voltage
d VGSS garanteed to be ±30V .
4) High package power.
Dimensions (Unit : mm)
LPTS
10.1
4.5 1.3
9.0
13.1
1.0
3.0
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
1.2
de Application n s Switching
e n Packaging specifications
m ig Package
Type
Code
s Basic ordering unit (pieces)
RCJ330N25
Taping TL
1000
Inner circuit
∗1
(1) Gate (2) Drain (3) Source
(1)
(2)
(3)
1 BODY DIODE
om e Absolute maximum ratings (Ta 25°C)
D Parameter
Symbol Limits
Unit
c Drain-source voltage
Gate-source voltage
e w Drain current
Continuous Pulsed
R e Source current
(Body Diode)
Continuous Pulsed
t Avalanche current
N Avalanche energy
o Power dissipation (Tc=25C)
Channel temperature
NRange of storage temperature
VDSS
250
V
VGSS
30
V
ID *3
33
A
IDP *1
132
A
IS *3
26
A
ISP *1
104
A
IAS *2
16.5
A
EAS *2
74.8
mJ
PD
211
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.
Thermal resistance Parameter
Channel to Case
* TC=25°C
Symbol Limits Rth(j-c) * 0.59
Unit C / W
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© 2016 ROHM Co., Ltd. All rights reserved.
1/6
2016.02 - Rev.B
RCJ330N25
Data Sheet
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
-
-
100 nA VGS=±30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 250
-
-
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
-
-
1
A VDS=250V, VGS=0V
Gate threshold voltage
VGS (th)
3
-
5
V VDS=10V, ID=1mA
Static drain-source on-state resistance Forward transfer admittance
Input capacitance
r Output capacitance o Reverse transfer capacitance f Turn-on delay time
Rise time
Turn-off delay time
d Fall time
Total gate charge
e Gate-source charge
Gate-drain charge
d *Pulsed
RDS (on*)
-
l Yfs l* 10
Ciss
-
Coss
-
Crss
-
td(on) *
-
tr *
-
td(off) *
-
tf *
-
Qg *
-
Qgs *
-
Qgd *
-
77
20 4500 220 130
50 200 120 140 80 25 27
105 m ID=16.5A, VGS=10V
-
S ID=16.5A, VDS=10V
-
pF VDS=25V
-
pF VGS=0V
-
pF f=1MHz
-
ns ID=16.5A, VDD 125V
-
ns VGS=10V
-
ns RL=7.6
-
ns RG=10
-
nC ID=33A,
-
nC VDD 125V
-
nC VGS=10V
en ns Body diode characteristics (Source-Drain) (Ta = 25C)
m ig Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
Not RecNoemw Des *Pulsed
Max. Unit
Conditions
1.5
V Is=33A, VGS=0V
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© 2016 ROHM Co., Ltd. All rights reserved.
2/6
2016.02 - Rev.B
RCJ330N25
Data Sheet
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
35
Ta=25°C Pulsed 30
VGS=10.0V
VGS=8.0V
Fig.2 Typical Output Characteristics (Ⅱ)
35
VGS=10.0V
30
VGS=8.0V
Ta=25°C Pulsed
25
25
Drain Current : ID [A]
Drain Currnt : ID [A]
20
r 15 o 1.