isc Silicon PNP Power Transistor
BD952
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·DC Cur...
isc Silicon
PNP Power
Transistor
BD952
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD951 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -4V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= -80V; IE= 0
VCB= -40V; IE= 0,TJ=150℃ VCE= -40V...