isc Silicon PNP Power Transistor
BD950F/952F/954F/956F
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Compl...
isc Silicon
PNP Power
Transistor
BD950F/952F/954F/956F
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD950F
-60
BD952F
-80
VCBO
Collector-Base Voltage
V
BD954F
-100
BD956F
-120
BD950F
-60
BD952F
-80
VCEO
Collector-Emitter Voltage
V
BD954F
-100
BD956F
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
22
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 8.12 ℃/W
isc website：www.iscsemi.com
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isc Silicon
PNP Power
Transistor
BD950F/952F/954F/956F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD950F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD952F BD954F
IC= -30mA ; IB= 0
BD956F
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) ICBO ICEO
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= -2A; VCE= -4V
VCB= VCBOmax; IE= 0 VCB= 1/2VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax; IB= 0
IEBO
Emitter Cutoff Current
...
