DAN222G

DAN222G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space is at a premium. Features http://onsemi.com CATHODE 3  Fast trr  Low CD  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 ANODE 2 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current (Note 1) Symbol VR VRM IF IFM IFSM Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc www.DataSheet.co.kr 1 SC-75/SOT-416 CASE 463 STYLE 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 --55 to +150 Unit mW C/W C MARKING DIAGRAM N9 M G G 1 N9 = Specific Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 mS ORDERING INFORMATION Device DAN222G DAN222T1G Package Shipping† SC--75/SOT--416 3000/Tape & R...