BD115

Transys Electronics L I M I T E D NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage (RBE<1KΩ Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak Power Dissipation @ Ta=50ºC Storage Temperature THERMAL RESISTANCE Junction to Ambient SYMBOL VCEO VCER VCBO VEBO IC ICM PD Tj, Tstg VALUE 180 245 245 5 150 200 6 -55 to +200 UNITS V V V V mA mA W ºC Rth(j-a) www.DataSheet.co.kr 25 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) VALUE TYP MAX DESCRIPTION Collector Emitter Breakdown Voltage Collector Base Breakdown Current Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain DYNAMIC CHARACTERISTICS Transition Frequency Collector Base Time Constant Feedback Capacitance SYMBOL BVCEO BVCBO BVEBO ICBO IEBO VCE(Sat) * VBE(on) * hFE TEST CONDITION IC=1mA,IB=0 IC=100µA, IE=0 IE=100µA, Ic=0 VCB=200V, IE=0 VCB=200V,IE=0,Tj=200ºC VEB=5V, IC=0 IC=100mA,IB=10mA IC=50mA,VCE=100V IC=50mA,VCE=100V MIN 180 245 5 UNITS V V V nA µA µA V V 15 550 100 3.5 1.0 22 60 fT rb'Cc Cre IC=30mA, VCE=100V f=20MHz IE=10mA, VCB=10V, f=10MHz VCE=20V, IC=10mA, f=1.0MHz 145 30 3.5 100 MHz ps pF *Pulse Test: Pulse Width <300µ s, Duty Cycle <2% Datasheet pdf - http://www.DataSheet4U.net/ BD115 TO-39 Metal Ca...