SPP07N60C3 SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultr...
SPP07N60C3 SPI07N60C3, SPA07N60C3
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
VDS @ Tjmax RDS(on) ID
650 0.6 7.3
V Ω A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
High peak current capability Improved transconductance
P-TO220-3-31
3 12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type SPP07N60C3
SPI07N60C3 SPA07N60C3
Package PG-TO220-3
PG-TO262 PG-TO220FP
Ordering Code Q67040-S4400 Q67040-S4424 SP000216303
Marking 07N60C3
07N60C3 07N60C3
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6)
Symbol
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
Value
SPP_I
SPA
7.3 4.6
21.9 230
7.31) 4.61)
21.9 230
0.5 0.5
7.3 7.3 ±20 ±20 ±30 ±30 83 32
-55...+150 15
Unit A
A mJ
A V W °C V/ns
Rev. 3.2
Page 1
2009-11-27
SPP07N60C3 SPI07N60C3, SPA07N60C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal ...