Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3116 2SK3116-S 2SK3116-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
•Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A) •Avalanche capability ratings
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 ±30 ±7.5 ±30 1.5 70 150 −55 to +150 7.5 37.5 3.5
V V A A W W °C °C A mJ V/ns
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt
Note2 Note2
IAS EAS dv/dt
Note3
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V 3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan
The mark 5 shows major revised points.
©
1998
Datasheet pdf - http://www.DataSheet4U.net/
2SK3116
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHRACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) Trr Qrr TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.75 A VGS = 10 V, ID = 3.75 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 3.75 A VGS = 10 V RG = 10 Ω RL = 50 Ω VDD = 450 V VGS = 10 V ID = 7.5 A IF = 7.5 A, VGS = 0 V IF = 7.5 A, VGS = 0 V di/dt = 50 A/ µs 2.5 2.0 0.9 1100 200 20 18 15 50 15 26 6 10 1.0 1.6 7.6 1.2 MIN. TYP. MAX. 100 ±100 3.5 UNIT
µA
nA V S Ω pF pF pF ns ns ns ns nC nC nC V
µs µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
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D.U.T. L VDD PG. RG RG = 10 Ω RL VDD VGS
Wave Form
VGS
0 10% VGS 90%
ID BVDSS IAS ID VDD τ = 1 µs Duty Cycle ≤ 1% VDS VGS 0 τ
90% 90% ID
ID
Wave Form
0
10% td(on) ton tr td(off) toff
10% tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D13339EJ2V0DS
Datasheet pdf - http://www.DataSheet4U.net/
2SK3116
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25 20 15 10 5 6V
FORWARD TRANSFER CHARACTERISTICS
100
ID - Drain Current - A
VGS = 10 V 8V
Tch = 125˚C 75˚C 10 Tch = 25˚C −25˚C
ID - Drain Current - A
1.0
0.1 VDS = 10 V Pulsed 15
0
10
20
30
40
0
5
10
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
5.0
10 Tch = −25˚C 25˚C 75˚C 125˚C 1.0
VGS(off) - Gate Cut-off Voltage - V
4.0
3.0
2.0
1.0 VDS = 10 V ID = 1 mA 0 −50 0 50 100 150
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VDS = 10 V Pulsed 0.1 0.1
1.0 ID - Drain Current - A
10
Tch - Channel Temperature - ˚C
RDS (on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-State Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.0 Pulsed
2.0 ID = 4.0 A 7.5 A 1.0
2.0 VGS = 10 V 20 V 1.0
0 0
5
10
15
0
1.0
VGS - Gate to Source Voltage - V
10 ID - Drain Current - A
100
Data Sheet D13339EJ2V0DS
3
Datasheet pdf - http://www.DataSheet4U.net/
2SK3116
RDS (on) - Drain to Source On-State Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
100
3.0 ID = 7.5 A 4.0 A
10
2.0
1.0 VGS = 10 V 0V
1.0 VGS = 10 V Pulsed 0 50 100 150 Tch - Channel Temperature - ˚C
0.1
0 −50
Pulsed 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
SWITCHING CHARACTERISTICS
10000 Ciss
td(on), tr, td(off), tf - Switching Time - ns
.