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K3116 Dataheets PDF



Part Number K3116
Manufacturers NEC
Logo NEC
Description 2SK3116
Datasheet K3116 DatasheetK3116 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3116 2SK3116-S 2SK3116-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3116 2SK3116-S 2SK3116-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A) •Avalanche capability ratings www.DataSheet.co.kr ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±7.5 ±30 1.5 70 150 −55 to +150 7.5 37.5 3.5 V V A A W W °C °C A mJ V/ns Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt Note2 Note2 IAS EAS dv/dt Note3 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V 3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan The mark 5 shows major revised points. © 1998 Datasheet pdf - http://www.DataSheet4U.net/ 2SK3116 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHRACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) Trr Qrr TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.75 A VGS = 10 V, ID = 3.75 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 3.75 A VGS = 10 V RG = 10 Ω RL = 50 Ω VDD = 450 V VGS = 10 V ID = 7.5 A IF = 7.5 A, VGS = 0 V IF = 7.5 A, VGS = 0 V di/dt = 50 A/ µs 2.5 2.0 0.9 1100 200 20 18 15 50 15 26 6 10 1.0 1.6 7.6 1.2 MIN. TYP. MAX. 100 ±100 3.5 UNIT µA nA V S Ω pF pF pF ns ns ns ns nC nC nC V µs µC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME www.DataSheet.co.kr D.U.T. L VDD PG. RG RG = 10 Ω RL VDD VGS Wave Form VGS 0 10% VGS 90% ID BVDSS IAS ID VDD τ = 1 µs Duty Cycle ≤ 1% VDS VGS 0 τ 90% 90% ID ID Wave Form 0 10% td(on) ton tr td(off) toff 10% tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D13339EJ2V0DS Datasheet pdf - http://www.DataSheet4U.net/ 2SK3116 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25 20 15 10 5 6V FORWARD TRANSFER CHARACTERISTICS 100 ID - Drain Current - A VGS = 10 V 8V Tch = 125˚C 75˚C 10 Tch = 25˚C −25˚C ID - Drain Current - A 1.0 0.1 VDS = 10 V Pulsed 15 0 10 20 30 40 0 5 10 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 5.0 10 Tch = −25˚C 25˚C 75˚C 125˚C 1.0 VGS(off) - Gate Cut-off Voltage - V 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA 0 −50 0 50 100 150 www.DataSheet.co.kr VDS = 10 V Pulsed 0.1 0.1 1.0 ID - Drain Current - A 10 Tch - Channel Temperature - ˚C RDS (on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.0 Pulsed 2.0 ID = 4.0 A 7.5 A 1.0 2.0 VGS = 10 V 20 V 1.0 0 0 5 10 15 0 1.0 VGS - Gate to Source Voltage - V 10 ID - Drain Current - A 100 Data Sheet D13339EJ2V0DS 3 Datasheet pdf - http://www.DataSheet4U.net/ 2SK3116 RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A 100 3.0 ID = 7.5 A 4.0 A 10 2.0 1.0 VGS = 10 V 0V 1.0 VGS = 10 V Pulsed 0 50 100 150 Tch - Channel Temperature - ˚C 0.1 0 −50 Pulsed 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 SWITCHING CHARACTERISTICS 10000 Ciss td(on), tr, td(off), tf - Switching Time - ns .


2SK3116 K3116 IDT82P20416


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