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2SC3975 Dataheets PDF



Part Number 2SC3975
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3975 Datasheet2SC3975 Datasheet (PDF)

Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 / ■ Absolute Maximum Ratings TC = .

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Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 / ■ Absolute Maximum Ratings TC = 25°C 16.2±0.5 (3.5) Solder Dip 1.1±0.1 0.6±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 800 V c e. d ty Collector-emitter voltage (E-B short) VCES 800 V n d stag tinue Collector-emitter voltage (Base open) VCEO 500 V a e cle con Emitter-base voltage (Collector open) VEBO 8 V lifecy , dis Base current IB 5 A n u duct typed Collector current IC 10 A te tin Pro ed Peak collector current ICP 20 A ur tinu Collector power dissipation PC 100 W ing fo iscon Ta = 25°C 3.0 in n follow ed d Junction temperature Tj 150 °C s lan Storage temperature Tstg −55 to +150 °C 5.45±0.3 10.9±0.5 123 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package a coed inclucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C M is ntinu tenan Parameter Symbol Conditions isco ain Collector-emitter voltage (Base open) e/D e, m Collector-base cutoff current (Emitter open) D nanc e typ Emitter-base cutoff current (Collector open) inte anc Forward current transfer ratio Mamainten Collector-emitter saturation voltage ned Base-emitter saturation voltage (pla Transition frequency VCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT IC = 10 mA, IB = 0 VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 6 A IC = 6 A, IB = 1.2 A IC = 6 A, IB = 1.2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz Min Typ Max Unit 500 V 100 µA 100 µA 15  8 1.0 V 1.5 V 20 MHz Turn-on time ton IC = 6 A 1.0 µs Storage time tstg IB1 = 1.2 A, IB2 = −2.4 A 3.0 µs Fall time tf VCC = 200 V 0.3 µs Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00119BED 1 2SC3975 Collector power dissipation PC (W) Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) PC  Ta 120 (1)TC=Ta (2)With a 100×100×2mm Al heat sink 100 (3)Without heat sink (1) (PC=3W) 80 60 IC  VCE 12 TC=25˚C 10 IB=100mA 8 50mA 40mA 6 30mA VCE(sat)  IC 100 IC/IB=5 10 TC=100˚C 25˚C –25˚C 1 Collector current IC (A) 20mA 40 4 10mA 0.1 20 (2) (3) 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 5mA 0 0 4 8 12 Collector-emitter voltage VCE (V) 0.01 0.1 1 10 100 Collector current IC (A) ce/ 100 an ed 10 ten tinu 1 in n 0.1 a o 0.1 M isc 10000 D 1 000 Transition frequency fT (MHz) Forward current transfer ratio hFE pe) VBE(sat)  IC e. d ty IC/IB=5 1.


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