Document
Power Transistors
2SC3975
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
21.0±0.5 15.0±0.2
• High-speed switching • High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
• Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw
2.0±0.2
2.0±0.1
/ ■ Absolute Maximum Ratings TC = 25°C
16.2±0.5 (3.5)
Solder Dip
1.1±0.1
0.6±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
800
V
c e. d ty Collector-emitter voltage (E-B short) VCES
800
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
500
V
a e cle con Emitter-base voltage (Collector open) VEBO
8
V
lifecy , dis Base current
IB
5
A
n u duct typed Collector current
IC
10
A
te tin Pro ed Peak collector current
ICP
20
A
ur tinu Collector power dissipation
PC
100
W
ing fo iscon Ta = 25°C
3.0
in n follow ed d Junction temperature
Tj
150
°C
s lan Storage temperature
Tstg −55 to +150 °C
5.45±0.3 10.9±0.5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package
a coed inclucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C
M is ntinu tenan Parameter
Symbol
Conditions
isco ain Collector-emitter voltage (Base open) e/D e, m Collector-base cutoff current (Emitter open)
D nanc e typ Emitter-base cutoff current (Collector open)
inte anc Forward current transfer ratio Mamainten Collector-emitter saturation voltage ned Base-emitter saturation voltage (pla Transition frequency
VCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT
IC = 10 mA, IB = 0 VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 6 A IC = 6 A, IB = 1.2 A IC = 6 A, IB = 1.2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz
Min Typ Max Unit
500
V
100 µA
100 µA
15
8
1.0
V
1.5
V
20
MHz
Turn-on time
ton
IC = 6 A
1.0
µs
Storage time
tstg
IB1 = 1.2 A, IB2 = −2.4 A
3.0
µs
Fall time
tf
VCC = 200 V
0.3
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00119BED
1
2SC3975
Collector power dissipation PC (W)
Base-emitter saturation voltage VBE(sat) (V)
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
120 (1)TC=Ta (2)With a 100×100×2mm
Al heat sink
100
(3)Without heat sink
(1) (PC=3W)
80
60
IC VCE
12 TC=25˚C
10 IB=100mA
8 50mA
40mA
6
30mA
VCE(sat) IC
100 IC/IB=5
10 TC=100˚C 25˚C –25˚C
1
Collector current IC (A)
20mA
40
4
10mA
0.1
20
(2)
(3)
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
5mA
0
0
4
8
12
Collector-emitter voltage VCE (V)
0.01
0.1
1
10
100
Collector current IC (A)
ce/ 100 an ed 10 ten tinu 1 in n 0.1 a o 0.1 M isc 10000 D 1 000
Transition frequency fT (MHz)
Forward current transfer ratio hFE
pe) VBE(sat) IC e. d ty IC/IB=5
1.